Analogy Computation of Ions Transport and Sputtering Behavior in Coating Process

Abstract

With radio frequency sputtering as a study case, this paper aims to simulate and analyze the results from analogy computation on the plasma transport and sputtering behavior in the coating process by a computer. The results reveal that, when plasma sheath parameters are equal to pressure strength, the ions are ingested into the target surface at a vertical angle. As the pressure beefs up, the ion density and sputtering yield will gradually grow up, so does the deposition rate. In the end, it is concluded that energy gradient and sputtering behavior of various particles in the coating process correspond to the general law.