Zhang T., Zheng A., Zhang J., 2018, Melt Flow and Dopant Distribution During the Growth of Si and Ge Crystal: A Review, Chemical Engineering Transactions, 66, 343-348.
Segregation occurs for most of dopants employed in crystal growth, leading to variation of dopant concentration and properties along the crystal. This article presented a review of recent research on melt flow and dopant distribution during the growth of Si and Ge crystal. The effects of melt flow and segregation on the dopant distribution in systems including Czochralski indium doped germanium crystals, Czochralski B-Ge codoped silicon crystals, and Ga doped germanium crystals grown by the VB method. The convection, solute distribution, and their effect on resistivity distribution during CZ antimony doped germanium single crystal still need further investigation.
