Abstract
With the deepening of the sustainable development concept, solar cells as a clean energy has become the most promising material to replace fossil energy. The production cost of crystalline silicon thin film materials accounts for more than over 90% of solar cell raw materials, so it is the focus of research on solar cells to prepare the crystalline silicon thin film materials. In this paper, crystalline silicon solar cell films were prepared by rapid photothermal annealing (RPA) and rapid thermal chemical vapor deposition (RTCVD). Then, the properties of the films were investigated. The results show that RPA and RTCVD are important methods for preparing large crystalline silicon films; annealing conditions, annealing time and deposition temperature all affect the deposition of crystalline silicon. The most critical process to ensure solar cell quality is the junction process. In order to obtain a greater probability of carrier collection, the p-n junction should be as close as possible to the surface and form a shallow junction. This study provides experimental and theoretical basis for the preparation of crystalline silicon solar cell film materials at high temperature and low temperature.
